• DocumentCode
    3540304
  • Title

    Angular dependence of exchanes bias field and coecive field in MN-IR/CO-FE epitaxial bilayers

  • Author

    Kim, D.Y. ; Kim, C.G. ; Kim, C.O. ; Takahashi, M. ; Tsunoda, M. ; Shibata, M.

  • Author_Institution
    Res. Center for Adv. Magnetic Mater., Chung Nam Nat. Univ., Daejon
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1027
  • Lastpage
    1027
  • Abstract
    The angular dependence of the exchange bias field (Hex) and coercive field (Hc) in the Co-Fe/Mn-Ir epitaxial bilayers is investigated. The Hex and Hc behavior with field angle is analyzed in terms of the main and closure domain structure of crystalline Co-Fe ferromagnetic layer. Hex and H c are observed to decrease slightly as the annealing angle decreases. Hex is found to increase as the magnetic field angle increase till 50deg and shows a peak, and then decrease as the angle increase further. The Hc also decreases up to magnetic field angle 50deg and shows zero values at angle greater than 50deg
  • Keywords
    annealing; antiferromagnetic materials; cobalt alloys; coercive force; exchange interactions (electron); ferromagnetic materials; interface magnetism; iridium alloys; iron alloys; magnetic domains; magnetic epitaxial layers; manganese alloys; CoFe-MnIr; annealing angle; closure domain structure; coercive field; crystalline ferromagnetic layer; epitaxial bilayers; exchange bias field; magnetic field angle; Anisotropic magnetoresistance; Annealing; Crystallization; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetization; Perpendicular magnetic anisotropy; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Conference_Location
    Nagoya
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464465
  • Filename
    1464465