DocumentCode
3540868
Title
Rigorous characterization of silicon nanowires and slot waveguides
Author
Rahman, B.M.A. ; Leung, D.M.H. ; Kejalakshmy, N. ; Grattan, K.T.V.
Author_Institution
Sch. of Eng. & Math. Sci., City Univ. London, London, UK
fYear
2011
fDate
Oct. 29 2011-Nov. 1 2011
Firstpage
268
Lastpage
272
Abstract
Full-vectorial modal field and Poynting vector profiles for silicon based nanowires are presented by using a numerically efficient and rigorous H-field finite element method. Results for novel vertical and horizontal slot waveguides are also presented showing TE and TM modes guidance through the low index dielectric regions.
Keywords
elemental semiconductors; finite element analysis; modal analysis; nanophotonics; nanowires; optical waveguides; silicon; H-field finite element method; Poynting vector profiles; Si; TE modes; TM modes; full-vectorial modal; horizontal slot waveguides; low index dielectric regions; silicon nanowires; vertical slot waveguides; Indexes; Nanowires; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Silicon; Optoelectronic Devices; Silicon Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Optoelectronics Conference (IMOC), 2011 SBMO/IEEE MTT-S International
Conference_Location
Natal
ISSN
Pending
Print_ISBN
978-1-4577-1662-1
Type
conf
DOI
10.1109/IMOC.2011.6169227
Filename
6169227
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