A monolithic isolation amplifier in silicon-on-insulator CMOS

Author

Culurciello, Eugenio ; Pouliquen, P. ; Andreou, A.G. ; Strohbehn, K. ; Jaskulek, S.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

137

Abstract

We designed and fabricated a 4-channel digital isolation amplifier in a 0.5 μm silicon-on-sapphire (SOS) technology, by taking advantage of the isolation properties of the SOS substrate. The individual isolation channels can operate in the excess of 100Mbps using a differential transmission scheme. The device can tolerate ground bounces of 1V/μs and isolate more than 800V. The device uses an isolated charge pump circuit to power the input circuit from the isolated output side and thus can be used as a sensing device. Applications are in the industrial, medical and military: high reliability systems, harsh industrial environments, transportation, medical and life critical systems.

Keywords

CMOS integrated circuits; amplifiers; integrated circuit reliability; isolation technology; power supply circuits; sapphire; silicon-on-insulator; 4-channel digital isolation amplifier; SOS technology; differential transmission; ground bounces; high reliability systems; isolated charge pump circuit; life critical systems; monolithic isolation amplifier; silicon-on-insulator CMOS; silicon-on-sapphire technology; transportation; Coupling circuits; Defense industry; Galvanizing; Isolators; Packaging; Physics computing; Silicon on insulator technology; Switches; Transportation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1464543

Filename

1464543