DocumentCode :
3540941
Title :
Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation
Author :
Kim, Yoon ; Yun, Jang-Gn ; Park, Han, II ; Cho, Seongjae ; Lee, Jung Hoon ; Park, Se-Hwan ; Lee, Dong Hua ; Kim, Doo-Hyun ; Lee, Gil Sung ; Sim, Won Bo ; Lee, Jong-Duk ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
fYear :
2008
fDate :
15-16 June 2008
Firstpage :
1
Lastpage :
2
Abstract :
A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using ATLAS simulation. This device structure is promising for multi-storage and multi-level operation.
Keywords :
flash memories; ATLAS simulation; SONOS flash memory; electrical interference; locally-separated vertical channels; multilevel operation; multistorage operation; Computer science; Couplings; Fabrication; Flash memory; Gas insulated transmission lines; Interference; Numerical simulation; Oxidation; SONOS devices; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
Type :
conf
DOI :
10.1109/SNW.2008.5418389
Filename :
5418389
Link To Document :
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