• DocumentCode
    3541030
  • Title

    Independent Double Gate - potential for non-volatile memories

  • Author

    Bossu, G. ; Puget, S. ; Masson, P. ; Portal, J.M. ; Bouchakour, R. ; Mazoyer, P. ; Skotnicki, T.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The authors proposed an analysis of the IDG device as a potential non volatile memory cell. IDG allows the most extended electrical combinations compared to the SQeRAM and consequently a large range of use. The two gates of the transistor are dynamically and separately addressable.
  • Keywords
    random-access storage; semiconductor device models; transistors; IDG device; electrical combinations; independent double gate; nonvolatile memories; transistor gates; CMOS integrated circuits; Capacitance; Conductive films; FinFETs; Nonvolatile memory; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418399
  • Filename
    5418399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541030