DocumentCode :
3541041
Title :
Impact of bias schemes on Doherty power amplifiers
Author :
Liu, Chih-Yun ; Chen, Yi-Jan Emery ; Heo, Deukhyoun
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
212
Abstract :
This paper investigates the performance of a 2.4GHz CMOS two-way Doherty power amplifier with the different bias schemes for the auxiliary power device. For the conventional bias schemes, there are design tradeoffs in terms of power gain, gain flatness, P1dB, power-added efficiency, and third order harmonics. An adaptive bias scheme is proposed to bias the auxiliary device at class C for low power operation and at class AB for high power operation. It is shown that the adaptive bias scheme can achieve excellent performance without compromising some characteristics.
Keywords :
CMOS integrated circuits; UHF power amplifiers; 2.4 GHz; CMOS power amplifier; Doherty power amplifiers; adaptive bias scheme; auxiliary power device; bias schemes; class AB; class C; gain flatness; high power operation; low power operation; performance; power gain; power-added efficiency; third order harmonics; CMOS technology; Computer science; High power amplifiers; Mobile communication; OFDM; Power amplifiers; Power engineering and energy; Power generation; Power system harmonics; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1464562
Filename :
1464562
Link To Document :
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