• DocumentCode
    3541041
  • Title

    Impact of bias schemes on Doherty power amplifiers

  • Author

    Liu, Chih-Yun ; Chen, Yi-Jan Emery ; Heo, Deukhyoun

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    212
  • Abstract
    This paper investigates the performance of a 2.4GHz CMOS two-way Doherty power amplifier with the different bias schemes for the auxiliary power device. For the conventional bias schemes, there are design tradeoffs in terms of power gain, gain flatness, P1dB, power-added efficiency, and third order harmonics. An adaptive bias scheme is proposed to bias the auxiliary device at class C for low power operation and at class AB for high power operation. It is shown that the adaptive bias scheme can achieve excellent performance without compromising some characteristics.
  • Keywords
    CMOS integrated circuits; UHF power amplifiers; 2.4 GHz; CMOS power amplifier; Doherty power amplifiers; adaptive bias scheme; auxiliary power device; bias schemes; class AB; class C; gain flatness; high power operation; low power operation; performance; power gain; power-added efficiency; third order harmonics; CMOS technology; Computer science; High power amplifiers; Mobile communication; OFDM; Power amplifiers; Power engineering and energy; Power generation; Power system harmonics; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1464562
  • Filename
    1464562