Abstract :
The need to reduce power consumption in future logic devices has led to the exploration of different types of logic devices. One of the most attractive new types of logic is one that is based on the collective motion of charges in a semiconductor device. While there are many systems which exhibit exotic collective effects, coupled layer, or pseudospintronic, systems offer exotic physical behavior which may lend itself to exploitation in new logic devices. In this paper, the phrase "pseudospintronics" is used to describe a system in which the layer degree of freedom is represented as a spin. In this paper, the authors explore the possibility of utilizing interaction enhanced tunneling currents in coupled silicon layers as a new type of low-power switch which could easily be incorporated into existing CMOS technology.
Keywords :
CMOS integrated circuits; carrier mobility; magnetoelectronics; semiconductor doping; switching circuits; tunnelling; CMOS technology; Si; charge collective motion; doped electron-hole silicon bilayer devices; enhanced tunneling current; exotic collective effects; future logic devices; low power switch; pseudospintronics; CMOS technology; Charge carrier processes; Doping; Logic devices; Microelectronics; Silicon; Switches; Temperature; Torque; Tunneling;
