Extremely high thermal conductivity of graphene: Prospects for thermal management applications in silicon nanoelectronics

Author

Balandin, A.A. ; Ghosh, S. ; Teweldebrhan, D. ; Calizo, I. ; Bao, W. ; Mia, F. ; Lau, C.N.

Author_Institution

Dept. of Electr. Eng., Univ. of California - Riverside, Riverside, CA, USA

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

Graphene, a recently discovered form of carbon, revealed many unique properties, including extremely high electron mobility of ~15000 cm²/Vs at room temperature (RT). We have experimentally studied the thermal conductivity of graphene suspended over a trench in silicon (Si) wafer. It was found for a given set of samples that RT thermal conductivity of graphene is in the range ~ 3080 - 5150 W/mK. The giant thermal conductivity and demonstrated graphene - Si integration suggest that graphene can become superior material for thermal management of Si nanoelectronic circuits.

Keywords

graphene; nanoelectronics; thermal conductivity; thermal management (packaging); graphene; high electron mobility; nanoelectronic circuits; silicon nanoelectronics; silicon wafer; thermal conductivity; thermal management; Atomic layer deposition; CMOS technology; Circuits; Conducting materials; Crystalline materials; Nanoelectronics; Silicon; Temperature sensors; Thermal conductivity; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418404

Filename

5418404