Title :
Extremely high thermal conductivity of graphene: Prospects for thermal management applications in silicon nanoelectronics
Author :
Balandin, A.A. ; Ghosh, S. ; Teweldebrhan, D. ; Calizo, I. ; Bao, W. ; Mia, F. ; Lau, C.N.
Author_Institution :
Dept. of Electr. Eng., Univ. of California - Riverside, Riverside, CA, USA
Abstract :
Graphene, a recently discovered form of carbon, revealed many unique properties, including extremely high electron mobility of ~15000 cm2/Vs at room temperature (RT). We have experimentally studied the thermal conductivity of graphene suspended over a trench in silicon (Si) wafer. It was found for a given set of samples that RT thermal conductivity of graphene is in the range ~ 3080 - 5150 W/mK. The giant thermal conductivity and demonstrated graphene - Si integration suggest that graphene can become superior material for thermal management of Si nanoelectronic circuits.
Keywords :
graphene; nanoelectronics; thermal conductivity; thermal management (packaging); graphene; high electron mobility; nanoelectronic circuits; silicon nanoelectronics; silicon wafer; thermal conductivity; thermal management; Atomic layer deposition; CMOS technology; Circuits; Conducting materials; Crystalline materials; Nanoelectronics; Silicon; Temperature sensors; Thermal conductivity; Thermal management;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418404
