Title :
Investigation of resistive probes with high sensitivity
Author :
Kim, Sang Wan ; Song, Jae Young ; Kim, Jong PH ; Woo Young Choi ; Chung, Han Ki ; Park, Jae ; Hyungsoo Ko ; Park, Hongsik ; Park, Chulmin ; Hong, Seungbum ; Choa, Sung-Hoon ; Lee, Jong Duk ; Shin, Hyungcheol ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO¿). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
Keywords :
etching; masks; probes; semiconductor process modelling; sensitivity; I-MOS probe; SILVACO; anisotropic etch process; enhancement probe; fabrication methods; mask transcription process; resistive probes; sensitivity; two-dimensional device simulation; Anisotropic magnetoresistance; Computer science; Etching; Fabrication; Ferroelectric materials; Ion implantation; Laboratories; MOSFETs; Probes; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418407
