A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body

Author

Cho, NamKi ; Yu, YunSeop ; Hwang, Sungwoo

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body is presented. Both the numerical and the analytical models are derived from approximations by a superposition principle of the depletion region and the strong inversion region for the efficiency of the calculation. From those assumptions, the numerical and the analytical center potentials are obtained, and the surface potential, the inversion charge, and the drain-source current are also obtained. The results simulated from the analytical center and surface potential models as well as those simulated from the numerical models reproduce those simulated from the 3D device simulator within 1% errors. The inversion charges and drain currents simulated from the analytical model reproduce those simulated from the numerical model within 1% errors.

Keywords

MOSFET; numerical analysis; semiconductor device models; surface potential; doped body; drain-source current; fully-depleted surrounding-gate MOSFET; inversion charge; surface potential; Analytical models; Control engineering; Equations; MOSFETs; Nanoscale devices; Numerical models; Numerical simulation; Silicon; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418408

Filename

5418408