Improvement of thermal stability and reduction of Schottky barrier height of Ni germanide utilizing Ni-Pt(1%) alloy on Ge-on-Si substrate

Author

Zhang, Ying-Ying ; Oh, Jung-Woo ; Han, In-Sik ; Zhun Zhong ; Li, Shi-Guang ; Jun, Soon-Yen ; Park, Kee-Young ; Shin, Hong Sik ; Choi, Won-Ho ; Lee, Ga-Won ; Wang, Jin-Suk ; Majhi, Prashant ; Tseng, Hsing-Huang ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

In this study, thermal stability of Ni germanide on Ge-onSi substrate is improved using Ni-Pt(l%) alloy target. It is believed that Pt incorporation suppressed the oxidation of NiGe and Ni and Ge diffusion. The proposed Ni-Pt/TiN is also efficient in reducing hole barrier height between Ni germanide and source/drain, i.e., decrease of contact resistance therein. The extracted Schottky barrier height shows decrease of about 20 meV. Therefore, the proposed NiPt alloy could be promising for the high mobility Ge pMOSFET applications.

Keywords

Ge-Si alloys; Schottky barriers; nickel alloys; platinum alloys; semiconductor-metal boundaries; thermal stability; Ni-Pt; Ni-Pt-TiN; NiGe; Schottky barrier; alloy target; contact resistance; electron volt energy 20 meV; pMOSFET; thermal stability; Annealing; MOSFETs; Nickel alloys; Rough surfaces; Schottky barriers; Substrates; Surface roughness; Temperature; Thermal stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418409

Filename

5418409