Evolution of photodetectors by silicon-on-insulator material

Author

Inokawa, Hiroshi ; Satoh, H. ; Ono, Atsushi ; Catur Putranto, Dedy Septono ; Wei Du ; Priambodob, Purnomo Sidi ; Hartanto, Djoko

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

fYear

2013

fDate

25-28 June 2013

Firstpage

9

Lastpage

13

Abstract

Silicon-on-insulator (SOI) provides distinctive characteristics to photodetectors based on optical confinement and carrier confinement, resulting in enhanced light absorption and sensitive detection of photo-generated carriers, respectively. Specifically, the waveguiding modes in the SOI photodiode can be induced by the diffracted light from the surface plasmon antenna on top to give an enhanced light sensitivity, and wavelength and polarization selectivities. The carrier confinement in the SOI body enables one-by-one detection of the photo-generated carriers in SOI MOSFET, leading to the single-photon detection. In this report, such new features of photodetectors attained by SOI will be introduced.

Keywords

photodetectors; photoelectricity; plasmonics; silicon-on-insulator; surface plasmons; carrier confinement; light absorption; optical confinement; photodetector evolution; photogenerated carrier; sensitive detection; silicon-on-insulator material; single photon detection; surface plasmon antenna; waveguiding modes; Antennas; Gratings; Logic gates; Optical surface waves; Photodiodes; Silicon; Silicon-on-insulator; photodetector; silicon-on-insulator (SOI); single-photon detection; surface plasmon (SP) antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

QiR (Quality in Research), 2013 International Conference on

Conference_Location

Yogyakarta

Print_ISBN

978-1-4673-5784-5

Type

conf

DOI

10.1109/QiR.2013.6632526

Filename

6632526