Title :
Characterization of asymmetric coupled CMOS lines
Author :
Arz, U. ; Williams, D.F. ; Walker, D.K. ; Rogers, J.E. ; Rudack, M. ; Treytnar, D. ; Grabinski, H.
Author_Institution :
Lab. fur Informationstechnol., Hannover Univ., Germany
Abstract :
This paper investigates the properties of asymmetric coupled lines built in a 0.25 /spl mu/m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.
Keywords :
CMOS integrated circuits; S-parameters; coupled transmission lines; high-frequency transmission lines; integrated circuit metallisation; 0.25 micron; 50 MHz to 26.5 GHz; S-parameters; asymmetric coupled CMOS lines; high-frequency measurement; CMOS technology; Calibration; Contacts; Frequency; Impedance; Laboratories; NIST; Probes; Silicon; Testing;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863258
