Controlled polarisation and excitation of silicon on insulator isolated double quantum dots with remote charge sensing

In this paper a simulation-supported experimental investigation into the properties of highly doped (n_phosphorus ~ 2.9x10¹⁹ cm^-3) n-type silicon on insulator isolated double quantum dots (IDQDs) with integrated single electron transistor (SET) for charge sensing was presented. The structures were fabricated with post oxidation island diameters of between 80 and 125 nm on the same chip by means of electron beam lithography and reactive ion etching to give trench isolation. Low noise electrical measurements including microwave stimulation were performed at 4.2 K through immersion in liquid helium. The device layout and response offers the possibility of a scalable qubit system in silicon.