Title :
Memory characteristics of Ge1−xSix/Si hetero-nanocrystals in metal-oxide-semiconductor structures
Author :
Shi, Y. ; Lu, J. ; Zuo, Z. ; Chen, Y.B. ; Pu, L. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., Nanjing, China
Abstract :
Memory characteristics in the metal-oxide-semiconductor (MOS) structure based on Ge1-xSix/Si hetero-nanocrystals (HNCs) have been investigated experimentally and theoretically. The Ge1-xSix/Si HNCs on ultrathin SiO2 were fabricated through combining self-assembled growth and selective chemical etching technique. The observations demonstrate that the holes reach a longer retention time even with an ultrathin tunnel oxide, owing to the high band offset at the valence band between Ge and Si.
Keywords :
Ge-Si alloys; MIS structures; elemental semiconductors; etching; self-assembly; semiconductor storage; silicon; valence bands; Ge1-xSix-Si; band offset; heteronanocrystals; memory characteristics; metal-oxide-semiconductor structures; selective chemical etching; self assembled growth; ultrathin silica films; ultrathin tunnel oxide; valence band; Capacitance-voltage characteristics; Chemicals; Electrons; Etching; Fabrication; Hetero-nanocrystal memory; Hysteresis; MOS capacitors; Nanocrystals; Voltage; Hetero-nanocrystals; MOS; Memory;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418423
