Memory characteristics of Ge1−xSix/Si hetero-nanocrystals in metal-oxide-semiconductor structures

Author

Shi, Y. ; Lu, J. ; Zuo, Z. ; Chen, Y.B. ; Pu, L. ; Zheng, Y.D.

Author_Institution

Dept. of Phys., Nanjing Univ., Nanjing, China

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

Memory characteristics in the metal-oxide-semiconductor (MOS) structure based on Ge_1-xSi_x/Si hetero-nanocrystals (HNCs) have been investigated experimentally and theoretically. The Ge_1-xSi_x/Si HNCs on ultrathin SiO₂ were fabricated through combining self-assembled growth and selective chemical etching technique. The observations demonstrate that the holes reach a longer retention time even with an ultrathin tunnel oxide, owing to the high band offset at the valence band between Ge and Si.

Keywords

Ge-Si alloys; MIS structures; elemental semiconductors; etching; self-assembly; semiconductor storage; silicon; valence bands; Ge_1-xSi_x-Si; band offset; heteronanocrystals; memory characteristics; metal-oxide-semiconductor structures; selective chemical etching; self assembled growth; ultrathin silica films; ultrathin tunnel oxide; valence band; Capacitance-voltage characteristics; Chemicals; Electrons; Etching; Fabrication; Hetero-nanocrystal memory; Hysteresis; MOS capacitors; Nanocrystals; Voltage; Hetero-nanocrystals; MOS; Memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418423

Filename

5418423