Title :
Si bicrystal single-electron FETs
Author :
Kasai, Y. ; Ishino, T. ; Moraru, D. ; Nuryadi, R. ; Ikeda, H. ; Tabe, M.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Si single-electron (or single-hole) tunneling PETs containing a network of screw dislocations, which is intentionally formed as a periodic potential source, has been studied focusing on effects of thickness difference of the facing Si layers, i.e., upper and lower top Si layers. As a result, we have found that moderately balanced thicknesses between the layers provide significantly prominent single-electron characteristics.
Keywords :
field effect transistors; screw dislocations; silicon; tunnelling; Si bicrystal single-electron FET; Si single-electron tunneling PET; periodic potential source; screw dislocations; Crystallization; FETs; Fasteners; Intelligent networks; Positron emission tomography; Stability; Stress; Threshold voltage; Tunneling; Wafer bonding;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418426
