Title :
Room temperature behavior of poly-silicon quantum dot single electron transistors
Author :
Kang, Kwon Chil ; Yang, Hong Sun ; Lee, Joung-Eob ; Yun, Jang-Gn ; Lee, Jung Han ; Lee, Dong-Seup ; Park, Sang Hyuk ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by the selective etch of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon. The device is named as a PQD-SET, i.e., poly-silicon quantum dot single electron transistor. PQD-SET shows clear Coulomb oscillation at room temperature.
Keywords :
quantum dots; single electron transistors; Coulomb oscillation; fabrication method; planarized surface; poly-silicon quantum dot single electron transistors; room temperature behavior; room temperature operation; selective etch; self-aligned quantum dot; silicon nanowire; subsequent deposition; temperature 293 K to 298 K; Etching; Fabrication; Oxidation; Planarization; Quantum capacitance; Quantum computing; Quantum dots; Silicon; Single electron transistors; Temperature;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418429
