Title :
40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Author :
Leven, A. ; Hurm, V. ; Bronner, W. ; Kohler, K. ; Walcher, H. ; Kiefer, R. ; Fleissner, J. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver consists of a GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifier. The overall conversion gain is as high as 167 V/W.
Keywords :
HEMT circuits; III-V semiconductors; distributed amplifiers; flip-chip devices; gallium arsenide; microwave photonics; optical receivers; optical waveguide components; photodiodes; 1.55 micron; 40 GHz; GaAs; GaAs pseudomorphic HEMT distributed amplifier; GaInAs-AlGaInAs-AlInAs; GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode; bandwidth; conversion gain; flip-chip mounting; high-speed digital communication; microwave-via-fiber communication; optical receiver; Bandwidth; Bonding; Distributed amplifiers; Gold; HEMTs; Indium phosphide; Optical amplifiers; Optical receivers; Optical waveguides; Photodiodes;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863275
