An n-type silicon nanowire dot based single-electron transistor

Featuring in diameters of nanometers and lengths of micrometers, single-crystal silicon nanowires (SiNW) demonstrate quasi one-dimension properties and are potentially applicated as building blocks for nanoscale electronics. Precisely controlling one single-electron in a SiNW is essential to manipulate the elementary charge and spin for information device operations. This can be implemented by a single-electron transistor (SET) configuration. This work reports on the realization of a chemically bottom-up made n-type SiNW based SET and the study of electron transport properties about it.