Title :
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
Author :
Manoharan, M. ; Tsuchiya, Yoshishige ; Oda, Shunri ; Mizuta, Hiroshi
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
Keywords :
semiconductor doping; single electron transistors; surface roughness; dopant induced potential fluctuation; multiple tunnel junctions; random dopants; silicon single-electron transistors; surface roughness; Current measurement; Etching; Fluctuations; Magnetic tunneling; Rough surfaces; Silicon; Single electron devices; Single electron transistors; Surface roughness; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418435
