• DocumentCode
    3541320
  • Title

    Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?

  • Author

    Manoharan, M. ; Tsuchiya, Yoshishige ; Oda, Shunri ; Mizuta, Hiroshi

  • Author_Institution
    Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
  • Keywords
    semiconductor doping; single electron transistors; surface roughness; dopant induced potential fluctuation; multiple tunnel junctions; random dopants; silicon single-electron transistors; surface roughness; Current measurement; Etching; Fluctuations; Magnetic tunneling; Rough surfaces; Silicon; Single electron devices; Single electron transistors; Surface roughness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418435
  • Filename
    5418435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541320