Title :
X-band GaAs MMIC size reduction and integration
Author_Institution :
M/A-COM Inc., Roanoke, VA, USA
Abstract :
This paper describes efforts at ITT to develop cost effective GaAs X-Band MMICs. The ITT MSAG(R) GaAs MMIC process is first described. A brief discussion on the merits of chip integration is followed by a discussion of the ITT338510D commercial 12-Watt MMIC, and the ITT373504D commercial control chip (phase shifter, attenuator, driver, digital control) with emphasis on our efforts to reduce chip area.
Keywords :
III-V semiconductors; field effect MMIC; gallium arsenide; integrated circuit economics; integrated circuit yield; 12 W; GaAs; ITT MSAG process; ITT338510D; ITT373504D; MMIC; X-band; attenuator; chip area; chip integration; digital control; driver; multifunction self-aligned gate; phase shifter; size reduction; Assembly; Attenuators; Costs; FETs; Gallium arsenide; Ion implantation; MMICs; Manufacturing processes; Phase shifters; Robustness;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863281
