Title :
Low-voltage green transistor using hetero-tunneling
Author :
Bowonder, Anupama ; Pate, Pratik ; Jeon, Kanghoon ; Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing-Huang ; Hu, Cheming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A novel hetero-tunnel transistor (HtFET) with a heterostructure parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling Vdd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.
Keywords :
Ge-Si alloys; dielectric materials; field effect transistors; low-power electronics; quantum theory; semiconductor heterojunctions; technology CAD (electronics); HtFET concept; Si-Ge; TCAD simulation; dielectric interface; hetero-tunneling; heterostructure; high-K metal-gate; low-power electronics; low-voltage electronics; low-voltage green transistor; quantum mechanical tunneling theory; Computer science; Drives; Electrons; Energy consumption; High K dielectric materials; High-K gate dielectrics; Medical simulation; Quantum mechanics; Transistors; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418440
