Title :
A low power 20 GHz SiGe dual-modulus prescaler
Author :
Knapp, H. ; Meister, T.F. ; Wurzer, M. ; Aufinger, K. ; Boguth, S. ; Treitinger, L.
Author_Institution :
Corp. Res., Infineon Technol. AG, Munich, Germany
Abstract :
We present a dual-modulus prescaler manufactured in SiGe bipolar technology. The circuit has selectable divide ratios of 256 and 257 and is intended for use in frequency synthesizers. It operates up to a maximum frequency of 20 GHz with a supply voltage of 2.3 V and a power consumption of only 27 mW.
Keywords :
Ge-Si alloys; bipolar integrated circuits; frequency synthesizers; low-power electronics; prescalers; semiconductor materials; 2.3 V; 20 GHz; 27 mW; SiGe; SiGe bipolar technology; frequency synthesizer; low power dual-modulus prescaler; Circuits; Cutoff frequency; Energy consumption; Flip-flops; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Master-slave; Silicon germanium; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863286
