Title :
Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode
Author :
Park, J.S. ; Saraya, T. ; Miyaji, K. ; Shimizu, K. ; Higo, A. ; Takahashi, K. ; Yi, Y.H. ; Toshiyoshi, H. ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper. than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.
Keywords :
Coulomb blockade; MOSFET; silicon; single electron transistors; Coulomb blockade oscillation; movable gate electrode; silicon MOSFET; single electron transistors; subthreshold swing; tuning capacitance; Capacitance; Circuit optimization; Electrodes; Equivalent circuits; Fabrication; MOSFETs; Silicon; Single electron transistors; Tuning; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418442
