High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOl FinFETs

Author

Irisawa, T. ; Okano, K. ; Horiuchi, T. ; Itokawa, H. ; Mizushima, I. ; Usuda, K. ; Tezuka, T. ; Sugiyama, N. ; Takagi, S.

Author_Institution

MIRAI-ASET, Toshiba Coporation, Kawasaki, Japan

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along <110>. Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high I_on enhancement of +38% and the I_on value of 900 Â¿A/Â¿m in 50 nm gate length n-FinFETs with (110) surfaces were realized.

Keywords

MOSFET; high electron mobility transistors; nanofabrication; silicon-on-insulator; (100) universal mobility; (110) surface; Si; high electron mobility enhancement; low parasitic resistance; short channel device; size 50 nm; subband engineering; uniaxial strain; uniaxial tensile strain; uniaxially strained SOI FinFETs; Capacitive sensors; Electron mobility; Epitaxial growth; FinFETs; Manufacturing processes; Research and development; Substrates; Surface resistance; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418443

Filename

5418443