Title :
High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOl FinFETs
Author :
Irisawa, T. ; Okano, K. ; Horiuchi, T. ; Itokawa, H. ; Mizushima, I. ; Usuda, K. ; Tezuka, T. ; Sugiyama, N. ; Takagi, S.
Author_Institution :
MIRAI-ASET, Toshiba Coporation, Kawasaki, Japan
Abstract :
We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along <110>. Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high Ion enhancement of +38% and the Ion value of 900 ¿A/¿m in 50 nm gate length n-FinFETs with (110) surfaces were realized.
Keywords :
MOSFET; high electron mobility transistors; nanofabrication; silicon-on-insulator; (100) universal mobility; (110) surface; Si; high electron mobility enhancement; low parasitic resistance; short channel device; size 50 nm; subband engineering; uniaxial strain; uniaxial tensile strain; uniaxially strained SOI FinFETs; Capacitive sensors; Electron mobility; Epitaxial growth; FinFETs; Manufacturing processes; Research and development; Substrates; Surface resistance; Tensile strain; Uniaxial strain;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418443
