First-principles study on inversion layer properties of double-gate atomically thin silicon channel

Recent progress of semiconductor technologies requires deep understanding on the device physics in the nanometer scale. Several pioneering researchers studied the nanometer-scale Si structures by the first-principles calculation method and succeeded to predict its significant reduction in the dielectric constant for the structure smaller than 3 nm. Those studies however could not discuss deeper device physics of the field effect transistors (FET) when the structure is used for the FET channel, because their method cannot calculate the charged up structures under the external electric field. We have thus developed a new first-principles method so called the EFED method. Based on this method, we discuss the inversion layer properties of a simple Si nanostructure as the first step.