An improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling

An improved deep sub-micron (0.25 /spl mu/m) MOSFET RF large signal model that incorporates a new breakdown current model and drain to substrate nonlinear coupling was developed and investigated with various experiments. An accurate breakdown model is required for a deep submicron MOSFET due to its relatively low breakdown voltage. For the first time, this improved RF nonlinear model incorporates the breakdown voltage turnover behavior into a continuously differentiable channel current model, and the new nonlinear coupling network between the drain and lossy substrate. The robustness of the model was verified with measured pulsed I-V, S-parameters, power characteristics and inter-modulation distortions at different input and output matching conditions, operating biases, and frequencies.