Title :
Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
Author :
Hill, R.J.W. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D.S. ; Thoms, S. ; Asenov, A. ; Thayne, I.G. ; Droopad, R. ; Rajagopalan, K. ; Fejes, P. ; Passlack, M.
Author_Institution :
Nanoelectron. Res. Centre, Univ. of Glasgow, Glasgow, UK
Abstract :
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.
Keywords :
III-V semiconductors; MOSFET; III-V semiconductors; channel nMOSFET; flatband-mode; high mobility channel materials; metal-oxide-semiconductor field effect transistors; performance metrics; strained silicon; CMOS technology; Contact resistance; Dielectric materials; Dielectric substrates; Electrons; III-V semiconductor materials; MOSFET circuits; Measurement; Silicon; Transconductance;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418447
