DocumentCode :
3541413
Title :
Impact of atomic oxide roughness and local gate depletion on Vth variation in MOSFETs
Author :
Putra, Arifin Tamsir ; Tsunomura, Takaaki ; Nishida, Akio ; Kamoh, Shiro ; Takeuchi, Kiyoshi ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2008
fDate :
15-16 June 2008
Firstpage :
1
Lastpage :
2
Abstract :
The threshold voltage (Vth) variation in MOSFETs induced by electrical thickness (Tinv) fluctuations due to atomic oxide roughness (AOR) and local gate depletion (LGD) by 3D simulation was demonstrated in this study. It was considered that the impact of Tinv fluctuations on Vth variation is small.
Keywords :
MOSFET; semiconductor device models; 3D simulation; MOSFETs; atomic oxide roughness; electrical thickness fluctuations; local gate depletion; threshold voltage variation; Analytical models; Atomic measurements; Electrodes; Fluctuations; Grain boundaries; Grain size; Impurities; MOS devices; MOSFETs; Resource description framework;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
Type :
conf
DOI :
10.1109/SNW.2008.5418448
Filename :
5418448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3541413
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