• DocumentCode
    3541413
  • Title

    Impact of atomic oxide roughness and local gate depletion on Vth variation in MOSFETs

  • Author

    Putra, Arifin Tamsir ; Tsunomura, Takaaki ; Nishida, Akio ; Kamoh, Shiro ; Takeuchi, Kiyoshi ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The threshold voltage (Vth) variation in MOSFETs induced by electrical thickness (Tinv) fluctuations due to atomic oxide roughness (AOR) and local gate depletion (LGD) by 3D simulation was demonstrated in this study. It was considered that the impact of Tinv fluctuations on Vth variation is small.
  • Keywords
    MOSFET; semiconductor device models; 3D simulation; MOSFETs; atomic oxide roughness; electrical thickness fluctuations; local gate depletion; threshold voltage variation; Analytical models; Atomic measurements; Electrodes; Fluctuations; Grain boundaries; Grain size; Impurities; MOS devices; MOSFETs; Resource description framework;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418448
  • Filename
    5418448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541413