• DocumentCode
    3541433
  • Title

    Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations

  • Author

    Shin, Changhwan ; Carlson, Andrew ; Sun, Xin ; Jeon, Kanghoon ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Atomistic 3D device simulations of 20nm-gate-length planar vs. tri-gate bulk MOSFETs with identical nominal retrograde-well and source/drain doping profiles show that the tri-gate structure is more robust to random dopant fluctuation (RDF) effects, i.e. threshold voltage (VTH) lowering and variation. VTH lowering is verified to be due primarily to channel/well RDF. For the tri-gate bulk MOSFET, VTH adjustment via tuning of the doping depth provides for reduced variability, as compared with tuning of the channel/well dose.
  • Keywords
    MOSFET; doping profiles; semiconductor device models; atomistic 3D device simulations; doping depth; random dopant fluctuations; source-drain doping profiles; threshold voltage lowering; tri-gate bulk MOSFET design; CMOS technology; Computational modeling; Doping profiles; Fluctuations; Lattices; MOSFET circuits; Resource description framework; Robustness; Sun; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418451
  • Filename
    5418451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541433