Title :
Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations
Author :
Shin, Changhwan ; Carlson, Andrew ; Sun, Xin ; Jeon, Kanghoon ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
Atomistic 3D device simulations of 20nm-gate-length planar vs. tri-gate bulk MOSFETs with identical nominal retrograde-well and source/drain doping profiles show that the tri-gate structure is more robust to random dopant fluctuation (RDF) effects, i.e. threshold voltage (VTH) lowering and variation. VTH lowering is verified to be due primarily to channel/well RDF. For the tri-gate bulk MOSFET, VTH adjustment via tuning of the doping depth provides for reduced variability, as compared with tuning of the channel/well dose.
Keywords :
MOSFET; doping profiles; semiconductor device models; atomistic 3D device simulations; doping depth; random dopant fluctuations; source-drain doping profiles; threshold voltage lowering; tri-gate bulk MOSFET design; CMOS technology; Computational modeling; Doping profiles; Fluctuations; Lattices; MOSFET circuits; Resource description framework; Robustness; Sun; Threshold voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418451
