Effect of Gauss doping profile on electric potential of p-n diode

Author

Sapteka, A. A. N. Gde ; Abuzairi, T. ; Hartanto, Djoko

Author_Institution

Dept. of Electr., Politek. Negeri Bali, Badung, Indonesia

fYear

2013

fDate

25-28 June 2013

Firstpage

226

Lastpage

231

Abstract

This study aimed to determine the effects of Gauss doping profile on electric potential of p-n diode. This effect is studied by simulating PN diodes at equilibrium condition with differences in doping fall-off constant (dfc) using MATLAB and COMSOL software. According to the simulation results, it concluded that p-n diode with different Gaussian doping profile, will produce similar built-in voltage (V_Gbi). But, each p-n diode with different Gaussian doping profile, has different maximum junction voltage (V_jmax) and minimum junction voltage (V_jmin). These junction voltages have strong correlation with dfc. We propose an equation of built-in voltage for Gauss Doping Profile, and also equations of V_jmax and V_jmin.

Keywords

doping profiles; p-n junctions; semiconductor diodes; COMSOL software; Gauss doping profile; MATLAB; built-in voltage; doping fall-off constant; electric potential; equilibrium condition; maximum junction voltage; minimum junction voltage; p-n diode; Doping profiles; Economic indicators; Electric potential; Junctions; Mathematical model; Semiconductor process modeling; Electric Potential; Gauss Doping Profile; p-n Diode;

fLanguage

English

Publisher

ieee

Conference_Titel

QiR (Quality in Research), 2013 International Conference on

Conference_Location

Yogyakarta

Print_ISBN

978-1-4673-5784-5

Type

conf

DOI

10.1109/QiR.2013.6632569

Filename

6632569