Title :
Effects of growth temperature on crystal structure, electrical, and photoluminescence of ZnO thin films
Author :
Sugihartono, Iwan ; Bambang, S. ; Hikam, M. ; Handoko, E. ; Fan, H.M. ; Tan, Siang Tong ; Sun, X.W.
Author_Institution :
FMIPA, Jurusan Fis., Univ. Negeri Jakarta, Jakarta, Indonesia
Abstract :
ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolysis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase monotonically with increasing temperature. We believed that the ZnO thin films quality improved by increasing growth temperature.
Keywords :
Hall effect; II-VI semiconductors; liquid phase deposition; photoluminescence; pyrolysis; semiconductor growth; semiconductor thin films; ultrasonic applications; wide band gap semiconductors; zinc compounds; Si (111) substrate; UV emission; ZnO; crystal structure; donor concentrations; electrical properties; green emission; photoluminescence; thin films; ultrasonic spray pyrolisis; Films; Grain size; Silicon; Substrates; Temperature; Temperature measurement; Zinc oxide; Growth temperature; Hall measurement; PL; XRD; ZnO thin films;
Conference_Titel :
QiR (Quality in Research), 2013 International Conference on
Conference_Location :
Yogyakarta
Print_ISBN :
978-1-4673-5784-5
DOI :
10.1109/QiR.2013.6632570
