DocumentCode
3541481
Title
Characterization of a single resonant charge in a silicon nanowire device
Author
Pierre, M. ; Jehl, X. ; Sanquer, M. ; Vinet, M. ; Molas, G. ; Deleonibus, S.
Author_Institution
DRFMC, CEA-Grenoble, Grenoble, France
fYear
2008
fDate
15-16 June 2008
Firstpage
1
Lastpage
2
Abstract
We investigate the time-dependent transport properties of two very asymmetric coupled quantum dots: a single resonant charge and an electrometer made of a gated silicon nanowire in the Coulomb blockade regime. The occupation probability of the charge trap is obtained by noise measurements. We observe the predicted smearing of the Coulomb peaks at the resonance, the back-action of the electrometer on the single charge as well as a relatively large dip in the charging energy of the whole system.
Keywords
Coulomb blockade; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum dots; silicon; Coulomb blockade regime; Si; asymmetric coupled quantum dots; electrometer; noise measurements; silicon nanowire device; single resonant charge; time-dependent transport properties; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Nanoscale devices; Physics; Quantum dots; Resonance; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-2071-1
Type
conf
DOI
10.1109/SNW.2008.5418458
Filename
5418458
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