• DocumentCode
    3541481
  • Title

    Characterization of a single resonant charge in a silicon nanowire device

  • Author

    Pierre, M. ; Jehl, X. ; Sanquer, M. ; Vinet, M. ; Molas, G. ; Deleonibus, S.

  • Author_Institution
    DRFMC, CEA-Grenoble, Grenoble, France
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigate the time-dependent transport properties of two very asymmetric coupled quantum dots: a single resonant charge and an electrometer made of a gated silicon nanowire in the Coulomb blockade regime. The occupation probability of the charge trap is obtained by noise measurements. We observe the predicted smearing of the Coulomb peaks at the resonance, the back-action of the electrometer on the single charge as well as a relatively large dip in the charging energy of the whole system.
  • Keywords
    Coulomb blockade; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum dots; silicon; Coulomb blockade regime; Si; asymmetric coupled quantum dots; electrometer; noise measurements; silicon nanowire device; single resonant charge; time-dependent transport properties; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Nanoscale devices; Physics; Quantum dots; Resonance; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418458
  • Filename
    5418458