• DocumentCode
    3541488
  • Title

    Electron transport through silicon multiple quantum dot array devices

  • Author

    Yamahata, Gento ; Tsuchiya, Yoshishige ; Mizuta, Hiroshi ; Oda, Shunri

  • Author_Institution
    Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We fabricated the Si MQDADs. and measured their electron transport properties. The currents through the MQDADs were analyzed and the strong interaction. between the two DQDs was observed. The MQDADs are promising candidates for the novel information devices.
  • Keywords
    elemental semiconductors; semiconductor quantum dots; silicon; electron transport; silicon multiple quantum dot array devices; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Physics; Quantum dots; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418459
  • Filename
    5418459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541488