Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

Author

Wei Zhang ; Ying Hu ; Ting-Chang Chang ; Tsung-Ming Tsai ; Kuan-Chang Chang ; Hsin-Lu Chen ; Yu-Ting Su ; Rui Zhang ; Ya-Chi Hung ; Yong-En Syu ; Min-Chen Chen ; Jin-Cheng Zheng ; Hua-Ching Lin ; Sze, Simon M.

Author_Institution

Sch. of Adv. Mater. & Nanotechnol., Xidian Univ., Xi´an, China

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

552

Lastpage

554

Abstract

In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process.

Keywords

germanium compounds; oxidation; resistive RAM; space charge; GeSO; Schottky emission; chemical reaction properties; data retention tests; random access memory; resistive switching process; space charge limited current; triple ions effect; triple-ion redox reaction; Fitting; Ions; Nonvolatile memory; Random access memory; Resistance; Switches; Tin; RRAM; Schottky emission; Space-Charge Limited-Current; multi-state; space-charge limited-current; triple ions effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2424996

Filename

7090948