An L-band high efficiency and low distortion power amplifier module using an HPF/LPF combined interstage matching circuit

Author

Mori, K. ; Shinjo, S. ; Kitabayashi, F. ; Ohta, A. ; Ikeda, Y. ; Ishida, O.

Author_Institution

Inf. Technol. R&D Centre, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

865

Abstract

A three stage high power amplifier (HPA) module for wide-band CDMA handy phones using an HPF/LPF combined interstage matching circuit has been developed. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the second stage FET and the optimum source impedance of the third stage FET to achieve high efficiency. The developed three stage HPA module, size of which is 0.08cc (7 mm/spl times/7 mm./spl times/1.7 mm), achieves a power-added efficiency of 43.9% and an output power of 27.1 dBm with an adjacent channel leakage power (ACP) of -38 dBc at 1.95 GHz.

Keywords

UHF power amplifiers; code division multiple access; high-pass filters; impedance matching; low-pass filters; mobile radio; telephone sets; 1.95 GHz; 43.9 percent; FET; HPF/LPF combined interstage matching circuit; L-band; adjacent channel leakage power; distortion; efficiency; high power amplifier module; mobile phone handset; power added efficiency; wideband CDMA handy phone; Circuits; FETs; High power amplifiers; Impedance; L-band; Multiaccess communication; Optical amplifiers; Optical distortion; Power generation; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863317

Filename

863317