• DocumentCode
    3541500
  • Title

    Flicker noise in N-type and P-type silicon nanowire transistors

  • Author

    Yang, Seungwon ; Younghwan Son ; Suk, Sung Dae ; Kim, Dong-Won ; Park, Donggun ; Oh, Kyungseok ; Shin, Hyungcheol

  • Author_Institution
    Dept. of EE, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.
  • Keywords
    1/f noise; MOSFET; elemental semiconductors; flicker noise; nanowires; semiconductor device noise; silicon; Si; bias dependency; flicker noise; low frequency noise; n-type silicon nanowire transistors; p-type silicon nanowire transistors; planar MOSFET; twin silicon nanowire MOSFET; 1f noise; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Physics; Quantum dots; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418460
  • Filename
    5418460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541500