Title :
Flicker noise in N-type and P-type silicon nanowire transistors
Author :
Yang, Seungwon ; Younghwan Son ; Suk, Sung Dae ; Kim, Dong-Won ; Park, Donggun ; Oh, Kyungseok ; Shin, Hyungcheol
Author_Institution :
Dept. of EE, Seoul Nat. Univ., Seoul, South Korea
Abstract :
For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.
Keywords :
1/f noise; MOSFET; elemental semiconductors; flicker noise; nanowires; semiconductor device noise; silicon; Si; bias dependency; flicker noise; low frequency noise; n-type silicon nanowire transistors; p-type silicon nanowire transistors; planar MOSFET; twin silicon nanowire MOSFET; 1f noise; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Physics; Quantum dots; Silicon germanium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418460
