Title :
42% high efficiency two-stage HBT power amplifier MMIC for W-CDMA cellular phone system
Author :
Iwai, Toshiki ; Kobayashi, K. ; Nakasha, Y. ; Miyashita, T. ; Ohara, S. ; Joshin, K.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
This paper is the first to report a high efficiency two-stage HBT power amplifier MMIC for 1.95 GHz wide-band CDMA (W-CDMA) cellular phone system. Power amplifiers for W-CDMA system are required with high efficiency and high linearity over a wide range of output power level. To obtain a high efficiency, we chose a near class B operation. To obtain a high linearity, we suppressed the gain distortion due to a near class B operation by the adaptive biasing technique. The MMIC exhibited the highest power-added efficiency (PAE) of 42% ever reported, a gain of 30.5 dB, and an adjacent channel leakage power ratio (ACLR) it a 5 MHz offset frequency of -38 dBc at a Pout of 27 dBm under a supply voltage of 3.5 V with 3.84 Mcps HPSK modulation.
Keywords :
MMIC power amplifiers; bipolar MMIC; cellular radio; code division multiple access; heterojunction bipolar transistors; telephone sets; 1.95 GHz; 3.5 V; 30.5 dB; 42 percent; HPSK modulation; W-CDMA cellular phone; adaptive biasing; adjacent channel leakage power; class B operation; efficiency; gain distortion; linearity; power added efficiency; two-stage HBT power amplifier MMIC; Broadband amplifiers; Cellular phones; Gain; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Multiaccess communication; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863318
