Title :
Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)
Author :
Hong, B.H. ; Jung, Y.C. ; Hwang, S.W. ; Cho, K.H. ; Yeo, K.H. ; Yeoh, Y.Y. ; Suk, S.D. ; Li, M. ; Kim, D.-W. ; Park, D. ; Oh, K.S. ; Lee, W.S.
Author_Institution :
Res. Center for Time domain Nano-functional Devices, Korea Univ., Seoul, South Korea
Abstract :
Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.
Keywords :
MOSFET; nanowires; silicon; Si; Single electron tunneling behaviors; gate-all-around nanowire MOSFET; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; MOSFETs; Modems; Physics; Quantum dots; Silicon germanium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418464
