Control of single dopants in the electron conduction path in SOI doped-nanowire FETs

We demonstrated that in SOI-PETs with doped-nanowire channel, both top gate and back gate can be used for adjusting the potential profile. New diamonds correspond to addition of dopants in the conduction path. Control of the conduction path with single-dopant accuracy allows the optimization of the dopant-induced QD structure. One possible application is toward improving the controllability of single-electron transfer in otherwise naturally disordered dopant arrays.