Title :
Dynamics of single-electron capture in Si nanowire MOSFETs
Author :
Fujiwara, Akira ; Miyamoto, Satoru ; Nishiguchi, Katsuhiko ; Ono, Yukinori ; Zimmerman, N.M.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper propose a model for nonadiabatic electron capture and present a simulation that can explain the experimental results. It was found that the capture accuracy can be higher than the thermal-equilibrium limit. These findings might open up a way of utilizing a non-equilibrium process to break the thermal-equilibrium limit in the ultimate charge control.
Keywords :
MOSFET; electron capture; nanotechnology; nanowires; semiconductor device models; silicon; Si; nanowire MOSFET; nonadiabatic electron capture; single-electron capture; thermal-equilibrium limit; transfer accuracy; Doping; Electrons; FETs; Fluctuations; MOSFETs; Nanoscale devices; Quantum dots; Stability; Switches; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418469
