• DocumentCode
    3541561
  • Title

    Dynamics of single-electron capture in Si nanowire MOSFETs

  • Author

    Fujiwara, Akira ; Miyamoto, Satoru ; Nishiguchi, Katsuhiko ; Ono, Yukinori ; Zimmerman, N.M.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper propose a model for nonadiabatic electron capture and present a simulation that can explain the experimental results. It was found that the capture accuracy can be higher than the thermal-equilibrium limit. These findings might open up a way of utilizing a non-equilibrium process to break the thermal-equilibrium limit in the ultimate charge control.
  • Keywords
    MOSFET; electron capture; nanotechnology; nanowires; semiconductor device models; silicon; Si; nanowire MOSFET; nonadiabatic electron capture; single-electron capture; thermal-equilibrium limit; transfer accuracy; Doping; Electrons; FETs; Fluctuations; MOSFETs; Nanoscale devices; Quantum dots; Stability; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418469
  • Filename
    5418469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541561