Title :
Temperature dependence of effective channel length, source/drain resistance, and electron mobility in sub-50 nm MOSFETs
Author :
Kim, Junsoo ; Lee, Jaehong ; Yun, Yeonam ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Nano Systems Institute (NSI), Inter-University Semiconductor Research Center (ISRC), and School of EE, Seoul National University, San 56-1 Shinlim-dong, Kwanak-ku, Korea
Abstract :
In this paper, an experimental investigation on high temperature carrier mobility in MOSFETs is carried out with the aim of improving our understanding of carrier transport. The effective mobility is sensitive to the values of the effective channel length (Leff) and source/drain resistance (RSD). Therefore the extraction of Leff and RSD was performed in extracting carrier mobility at high temperature.
Keywords :
Capacitance-voltage characteristics; Current measurement; Electrical resistance measurement; Electron mobility; MOSFETs; Scattering; Temperature dependence; Temperature measurement; Temperature sensors; Very large scale integration;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418474
