Title :
Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)
Author :
Usuda, K. ; Nakaharai, S. ; Irisawa, T. ; Moriyama, Y. ; Hirashita, N. ; Tezuka, T. ; Yamashita, Yukihiko ; Taoka, N. ; Kiso, O. ; Yamarnoto, T. ; Sugiyama, N. ; Takagi, S.
Author_Institution :
MIRAI-ASET, Kawasaki, Japan
Abstract :
We have developed strained-Si-on-nothing (SSON) MOSFETs with a gate all around (GAA) structure by using selective wet etching and doped poly-Si CVD techniques. The nano-beam diffraction (NBD) method was employed to directly evaluate the strain within the SSON channels. We have demonstrated the enhanced drive current, Id, of the GAA SSON MOSFETs over that of relaxed control MOSFETs.
Keywords :
MOSFET; chemical vapour deposition; diffraction; etching; doped poly-Si CVD techniques; gate all around structure; nanobeam diffraction; selective wet etching; strained-silicon-on-nothing MOSFET; Capacitive sensors; Diffraction; Fabrication; MOSFET circuits; Silicon compounds; Spatial resolution; Strain measurement; Substrates; Tensile strain; Wet etching;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418480
