Title :
Multigate SOI MOSFETs: Accumulation-mode vs. enhancement-mode
Author :
Afzalian, A. ; Lederer, D. ; Lee, C.-W. ; Yan, R. ; Xiong, W. ; Cleavelin, C. Rinn ; Colinge, J.-P.
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Abstract :
The performances of accumulation-mode and inversion-mode multigate FETs are compared. Both simulation and experimental data are presented. Accumulation-mode devices have a higher current drive and less process variability than inversion-mode FETs.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; accumulation mode; enhancement mode; inversion mode; multigate SOI MOSFET; Computational modeling; Doping; Electrons; FETs; Green function; Instruments; MOS devices; MOSFETs; Potential well; Silicon on insulator technology;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418482
