Title :
Extraction of RF parameters in planar channel MOSFETs through RF device modeling
Author :
Lee, Ju-Wan ; Cho, Sung-Man ; Jo, Gwang-Doo ; Kim, Young-Kwang ; Son, Hun, II ; Lee, Jong-Ho
Author_Institution :
Sch. of EECS, Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
A new method to extract RF parameters of planar channel MOSFETs through RF device modeling was proposed, and also the model was verified up to 20 GHz. It was thought the proposed method and models can be applied consistently to extract resistances.
Keywords :
MOSFET; millimetre wave field effect transistors; semiconductor device models; RF device modeling; RF parameter extraction; frequency 20 GHz; planar channel MOSFETs; Circuit simulation; Circuit synthesis; Immune system; Large scale integration; MOSFETs; Nanoscale devices; Parameter extraction; Radio frequency; Radiofrequency integrated circuits; Roentgenium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418483
