• DocumentCode
    3541681
  • Title

    Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias

  • Author

    Pacheco-Sanchez, Anibal ; Enciso-Aguilar, Mauro ; Rodriguez-Mendez, Luis ; Ramirez-Garcia, Eloy

  • Author_Institution
    Dept. de Maestria en Cienc. en Ing. de Telecomun., Inst. Politec. Nac., Mexico City, Mexico
  • fYear
    2011
  • fDate
    Oct. 29 2011-Nov. 1 2011
  • Firstpage
    901
  • Lastpage
    904
  • Abstract
    In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; bias point; heterojunction bipolar transistor; high-frequency noise behavior modeling; minimum noise figure; Analytical models; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Optoelectronics Conference (IMOC), 2011 SBMO/IEEE MTT-S International
  • Conference_Location
    Natal
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1662-1
  • Type

    conf

  • DOI
    10.1109/IMOC.2011.6169331
  • Filename
    6169331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541681