Title :
Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias
Author :
Pacheco-Sanchez, Anibal ; Enciso-Aguilar, Mauro ; Rodriguez-Mendez, Luis ; Ramirez-Garcia, Eloy
Author_Institution :
Dept. de Maestria en Cienc. en Ing. de Telecomun., Inst. Politec. Nac., Mexico City, Mexico
fDate :
Oct. 29 2011-Nov. 1 2011
Abstract :
In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; bias point; heterojunction bipolar transistor; high-frequency noise behavior modeling; minimum noise figure; Analytical models; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Silicon germanium;
Conference_Titel :
Microwave & Optoelectronics Conference (IMOC), 2011 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
978-1-4577-1662-1
DOI :
10.1109/IMOC.2011.6169331
