Title :
Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach
Author :
Arefinia, Zahra ; Orouji, Ali A.
Author_Institution :
Dept. of Electr. Eng., Semnan Univ., Semnan, Iran
Abstract :
To combine the advantages of both DG (dual material gate) structures, in this paper we simulate the dual material double gate (DMDG) SOI MOSFET. We use 2D quantum simulation which is based on the self-consistent solution of the 2D Poisson-Schrodinger equation with open boundary conditions, within the non-equilibrium Green´s function (NEGF) formulation.
Keywords :
Green´s function methods; MOSFET; electron density; DMDG structure; MOSFET; NEGF approach; drain induced barrier lowering; drain source voltages; dual material double gate; electron density; gate source biases; nonequilibrium Green´s function; poly front gate; quantum simulation study; threshold voltage; transconductance; voltage 0.05 V; Analytical models; Electron devices; Large-scale systems; MOSFET circuits; Potential energy; Predictive models; Production; Silicon on insulator technology; Threshold voltage; Transconductance;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418485
