Title :
Compact modeling of surrounding-gate MOSFETs with doped channel in subthreshold region
Author :
Choi, Byung-Kil ; Jeong, Min-Kyu ; Kwon, Hyuck-In ; Lee, Jong-Ho
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
The modeling of the surface potential and diffusion current of SG MOSFETs with doped channel in the subthreshold region was preformed in this study. The compact models were verified in terms of channel length, fin body width, and body doping concentration at a given VGS and VDS by comparing with the results of the 3-D device simulation, and shown a good agreement with 3-D simulation.
Keywords :
MOSFET; Poisson equation; diffusion; doping profiles; semiconductor device models; semiconductor doping; surface potential; 3D device simulation; body doping concentration; channel length; compact modeling; diffusion current; doped channel; fin body width; subthreshold region; surface potential; surrounding-gate MOSFET; Controllability; Doping; Integrated circuit modeling; MOSFETs; Nanoscale devices; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Subthreshold current; Threshold voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418492
