Title :
Spectral response of THz detectors made on LT-GaAs grown at different temperatures
Author :
Abe, H. ; Tani, Motoaki ; Sakai, Kenji ; Nakashima, S.
Author_Institution :
Kansai Adv. Res. Center, Minist. of Posts & Telecommun., Kobe, Japan
Abstract :
Summary form only given. Low-temperature-grown GaAs (LT-GaAs) is a promising material for ultrafast optoelectronic devices. We have investigated the relation between carrier lifetime and spectral bandwidth of the photoconductive sampling detectors fabricated on the LT-GaAs grown at different temperatures. A strong correlation was discovered between the two characteristics.
Keywords :
carrier lifetime; gallium arsenide; low-temperature techniques; molecular beam epitaxial growth; photoconducting devices; semiconductor growth; submillimetre wave detectors; 1.5 mum; GaAs; LT-GaAs; LT-GaAs growth; THz detectors; carrier lifetime; different temperatures; low-temperature-grown; optoelectronic devices; photoconductive sampling detectors; spectral bandwidth; spectral response; strong correlation; Conducting materials; Detectors; Dielectric substrates; Electrodes; Frequency; Gallium arsenide; Glass; Probes; Sampling methods; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676145
