• DocumentCode
    3541890
  • Title

    Comparison of two class E amplifiers for EER transmitter

  • Author

    Heiskanen, Antti ; Rahkonen, Timo

  • Author_Institution
    Dept. of Electr. Eng., Oulu Univ., Finland
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    704
  • Abstract
    This paper compares two types of class E power amplifier and studies their applicability in an EER (envelope elimination and restoration) transmitter. In EER applications one of the main concerns is the modulation bandwidth of the supply voltage and DC bias current. It is shown here that a recently proposed parallel tuned class E dimensioning principle results in much wider modulation bandwidth due to lower bias inductance of the transistor, so that a given transistor can be used at higher frequency, or its response can be linearized by adding a parallel linear capacitance to the drain node. The findings are verified by behavioural simulation.
  • Keywords
    3G mobile communication; UHF power amplifiers; amplitude modulation; circuit simulation; code division multiple access; inductance; phase modulation; radio transmitters; CDMA; DC bias current; EER transmitter; UMTS; behavioural simulation; class E power amplifier; drain node; envelope elimination and restoration transmitter; modulation bandwidth; parallel linear capacitance; parallel tuned class E dimensioning principle; supply voltage; telecommunication systems; transistor bias inductance; transistor frequency; Amplitude modulation; Bandwidth; Capacitance; Circuit topology; Frequency; Inductance; Power amplifiers; Switches; Transmitters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1464685
  • Filename
    1464685