DocumentCode :
3541890
Title :
Comparison of two class E amplifiers for EER transmitter
Author :
Heiskanen, Antti ; Rahkonen, Timo
Author_Institution :
Dept. of Electr. Eng., Oulu Univ., Finland
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
704
Abstract :
This paper compares two types of class E power amplifier and studies their applicability in an EER (envelope elimination and restoration) transmitter. In EER applications one of the main concerns is the modulation bandwidth of the supply voltage and DC bias current. It is shown here that a recently proposed parallel tuned class E dimensioning principle results in much wider modulation bandwidth due to lower bias inductance of the transistor, so that a given transistor can be used at higher frequency, or its response can be linearized by adding a parallel linear capacitance to the drain node. The findings are verified by behavioural simulation.
Keywords :
3G mobile communication; UHF power amplifiers; amplitude modulation; circuit simulation; code division multiple access; inductance; phase modulation; radio transmitters; CDMA; DC bias current; EER transmitter; UMTS; behavioural simulation; class E power amplifier; drain node; envelope elimination and restoration transmitter; modulation bandwidth; parallel linear capacitance; parallel tuned class E dimensioning principle; supply voltage; telecommunication systems; transistor bias inductance; transistor frequency; Amplitude modulation; Bandwidth; Capacitance; Circuit topology; Frequency; Inductance; Power amplifiers; Switches; Transmitters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1464685
Filename :
1464685
Link To Document :
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